Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-18T18:22:11.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of SiGe Epitaxial Films Using Ellipsometry and X-Ray Fluorescence

Published online by Cambridge University Press:  25 February 2011

L.V. Munukutla ,
K. Evans  and
M.H. Liaw
L.V. Munukutla
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287–6606
K. Evans
Affiliation:
Motorola Inc., 5005 East McDowell Road, Phoenix, AZ 85008
M.H. Liaw
Affiliation:
Motorola Inc., 5005 East McDowell Road, Phoenix, AZ 85008
Get access

Abstract

Ellipsometry in combination with X-ray fluorescence spectroscopy is demonstrated as a suitable technique to characterize SiGe thin films (180–800 Å) rapidly and nondestructively. Film thickness values extracted from ellipsometry are in agreement with the measurements obtained using other techniques such as TEM, SIMS, and RBS. The measured Ge concentration obtained by direct excitation of X-rays in several SiGe films ranging from 6 to 20 atomic percent, shows good correlation with the values obtained using RBS and SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Drude, P., Physik, Ann. Chem. 36, 532, 865 (1889); 39, 481 (1890).Google Scholar
2. Rayleigh, Lord, Phil. Mag. 33, 1 (1892).CrossRefGoogle Scholar
3. Ellipsometry in the measurement of Surfaces and Thin films, Symposium Proceedings, Washington 1963, Nat. Bur. Stand. Misc. Publ. 256 (1964).Google Scholar
4. Proceedings of the conference on Recent Developments in Ellipsometry, Nebraska, August 7-9, (1968).Google Scholar
5. Zaininger, K.H. and Revesz, A.G., RCA Review, 25, 85 (1964).Google Scholar
6. McCrackin, F.L., Passaglia, E., Stromberg, R.R., and Steinberg, H.L., J.Res. Nat.Bur.Stand. - A Physics and Chemistry, 67A, No.4 (1963).CrossRefGoogle Scholar
7. Kamins, T.I., Electronics Letters, 27(No.5), 451 (1991).Google Scholar
8. Bootsma, G.A. and Meyer, F., Surface Science, 14, 52 (1969).Google Scholar
9. Spanier, R.F., Industrial Research, September (1975).Google Scholar
10. Saxena, A.N., J.Opt.Soc.Amer.,55, 1061 (1965).CrossRefGoogle Scholar
11. McCrackin, F.L., Nat.Bur.Stand.Tech.Note. 479 (1969).Google Scholar
12. Candela, G.A., Chandler-Horowitz, D., Marchiando, J.F., Novotny, D.B., Belzer, B.J., and Croarkin, M.C., NIST Special Publication 260–109, (1988).Google Scholar
13. Braunstein, R., Moore, A.R., and Herman, F., Phys. Rev. 109, 695 (1958).Google Scholar
14. Schmidt, E., Phys.Stat.So., 27, 57 (1968).Google Scholar
15. Humlicek, J., Lukes, F., Schmidt, E., Kekoua, M.G., and Khoutsishvili, E., Phys. Rev. B, 33, 1092 (1986).Google Scholar
16. Humlicek, J. et.al., Handbook of Optical Constants of Solids II, Academic Press, 607 (1991).Google Scholar
17. Handbook of Optical Costants of Solids, edited by Palik, E.D., Academic Press, 464 (1985).Google Scholar