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Characterization of Sputtered Tungsten Silicide as a Micromechanical Material

Published online by Cambridge University Press:  15 February 2011

Muh-Ling Ger  and
Richard B. Brown
Muh-Ling Ger
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, MI 48109-2122
Richard B. Brown
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Integrated Sensors and Circuits, University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

Refractory metal silicides, such as tungsten silicide (WSix), have been used for integrated circuit interconnect and self-aligned MESFET gates because of their low resistivity and thermal and chemical stability. These same characteristics make refractory metal silicides interesting materials for prospective use in micromechanical structures. However, little information on residual stresses, elastic moduli, or other micromechanical properties has been available for refractory metal silicide films.

This paper presents morphology and stress characteristics of sputter-deposited tungsten silicide films, including orientation-dependent variations, as functions of deposition parameters. The biaxial elastic modulus and thermal coefficient of expansion are found for our sputtered films. Stress-measurement methods and annealing are discussed. Released diaphragms of different sizes and shapes, having controlled residual stress, have been fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 276: Symposia U/Y – Smart Materials Fabrication and Materials for Micro-Electro-Mechanical Systems , 1992 , 283
Copyright
Copyright © Materials Research Society 1992

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References

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