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Characterization of Ultrathin Cosi2 on Si(111) Layers.

Published online by Cambridge University Press:  28 February 2011

J.L. Batstone ,
Julia M. Phillips  and
J.M. Gibson
J.L. Batstone
Affiliation:
At&T Bell Laboratories,Murray Hill Nj 07974
Julia M. Phillips
Affiliation:
At&T Bell Laboratories,Murray Hill Nj 07974
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Abstract

Ultrathin epitaxial CoSi2 films on Si(111) have been grown in ultrahigh vacuum by room temperature deposition of Co on Si(111) followed by a high temperature anneal at ~600°C. Characterization of the thin films with transmission electron microscopy has revealed pseudomorphic growth up to thicknesses ~30Å. Pinholes present in the pseudomorphic thin films are thought to prevent the trapping of dislocations within the film. A clear transition to films containing a regular network of misfit dislocations occurs at ~40Å. Evidence for the growth of CoSi2 via intermediate metal-rich silicide phases is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 445
Copyright
Copyright © Materials Research Society 1987

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References

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