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Characterization of Vanadium-Doped 4H-SiC Using Optical Admittance Spectroscopy

Published online by Cambridge University Press:  10 February 2011

S. R. Smith ,
A. O. Evwaraye ,
W. C. Mitchel ,
J. S. Solomon  and
J. Goldstein
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469–0178.
A. O. Evwaraye
Affiliation:
University of Dayton, Physics Department, 300 College Park, Dayton. Ohio 45469–2314
W. C. Mitchel
Affiliation:
Materials Directorate, MLPO, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, 45422–7077. USA
J. S. Solomon
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469–0167
J. Goldstein
Affiliation:
Materials Directorate, MLPO, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, 45422–7077. USA
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Abstract

Vanadium is an important dopant in SiC because it gives rise to donor levels near the middle of the bandgap which can be used to make the material semi-insulating, and semiinsulating material has many applications as a substrate material for high-power electronics. However, conventional means of characterizing electronic levels in the bandgap of the material require very high temperatures, in the neighborhood of 650–800 °C, in order to move the Fermi level to midgap and cause ionization of the V donors. The technique of Optical Admittance Spectroscopy permits the ionization of the midgap donors using light of the appropriate energy, and thus avoids the need for high temperatures. Using this technique we have examined several specimens of V-doped and high-resistivity 4H-SiC. We have identified levels previously associated with V, and new levels we attribute to Ti. Pinning of the Fermi level in some specimens was verified by high-temperature Hall effect measurements. SIMS measurements were used to determine impurity concentrations. IR absorption measurements were correlated with the Ti, V, and Cr concentrations determined by SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 253
Copyright
Copyright © Materials Research Society 1999

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References

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