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Characterization of Zirconium Germanosilicide Formed by Solid State Reaction of ZR With Sil−xGex Alloys

Published online by Cambridge University Press:  15 February 2011

Z. Wang ,
D. B. Aldrich ,
P. Goeller ,
R. J. Nemanich  and
D. E. Sayers
Z. Wang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
D. B. Aldrich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
P. Goeller
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
D. E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Sil−xGex solid state reaction. Thin films of C49 Zr(Si1−xGex)2 were formed from the solid phase reaction of Zr and Si1−xGex bilayer structures. It was observed that Zr reacts uniformly with the Sil−xGex alloy and that C49 Zr(Si1−x Gex)2 is the final phase of the Zr-Si1−xGex, solid phase reaction (such tht y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1−xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Sil−x Gex)2 in contact with Si1−Gex was investigated and no germanium segregation was detected in the Zr(Si1−xGex)2/Si1−Gex structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 387
Copyright
Copyright © Materials Research Society 1996

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