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Charge Transport in Low Stress Si-rich Silicon Nitride Thin Films

Published online by Cambridge University Press:  15 March 2011

S. Habermehl  and
C. Carmignani
S. Habermehl
Affiliation:
Sandia National Laboratories, Microelectronics Development Lab, Albuquerque, NM 87185
C. Carmignani
Affiliation:
Sandia National Laboratories, Microelectronics Development Lab, Albuquerque, NM 87185
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Abstract

Field dependent bulk charge transport in Si-rich, low stress silicon nitride thin films is studied in correlation to the local atomic Si-N bond strain. Across a range of film compositions varying from fully stoichiometric Si3N4 to Si-rich SiN0.54, Poole-Frenkel emission is determined to be the dominant charge transport mechanism with the Poole- Frenkel barrier height found to decrease concomitantly from 1.10 to 0.52 eV. Across the same composition range the local residual Si-N bond strain, as measured by FTIR spectroscopy, is observed to vary from 0.006 to –0.0026. Comparison of the barrier height to the residual strain reveals a direct correlation between the two quantities. It is concluded that reductions in the Poole-Frenkel barrier height are a manifestation of compositionally induced strain relief at the molecular level. Reductions in the barrier height result in increased Poole-Frenkel emission detrapping rates and consequently higher leakage currents in Si-rich films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B5.11
Copyright
Copyright © Materials Research Society 2002

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References

1. French, P. J., Sarro, P. M., Mallee, R., Fakkeldij, E. J. M. and Wolffenbuttel, R. F., Sensors and Actuators A58, 149 (1997).Google Scholar
2. Mastrangelo, C. H., Tai, Y-C and Muller, R. S., Sensors and Actuators A21–A23, 856 (1990).Google Scholar
3. Stewart, R. A., Kim, J., Kim, E. S., White, R. M. and Muller, R. S., Sensors and Materials 2, 285 (1991).Google Scholar
4. Williams, M., Smith, J., Mark, J., Matamis, G. and Gogoi, B., Proc. SPIE 4174, 436 (2000).Google Scholar
5. Tompkins, H. G., Dydyk, M. and Deal, P. W., J. Electrochem. Soc. 137(6), 2003 (1990).Google Scholar
6. Sze, S. M., J. Appl. Phys. 38(7), 2951 (1967).Google Scholar
7. Sinitsa, S. P. in Silicon Nitride in Electronics, edited by Belyi, V. I. (Elsevier, New York, 1988) p. 203.Google Scholar
8. Habermehl, S., J. Appl. Phys. 83(9), 4672 (1998).Google Scholar
9. Habermehl, S. and Carmignani, C., Appl. Phys. Lett. (accepted for publication: Jan., 2002).Google Scholar
10. Comber, P. G. Le and Spear, W. E., Phys. Rev. Lett. 25(8), 509 (1970).Google Scholar
11. Dunnett, B., Jones, D. I. and Stewart, A. D., Philos. Mag. B53(2), 159 (1986).Google Scholar