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Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems

Published online by Cambridge University Press:  28 February 2011

Jerzy Kanicki  and
Nancy Voke
Jerzy Kanicki
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Nancy Voke
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
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Extract

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Indeed, some valuable relationships between physico-chemical and mechanical properties have been established.Special attention has been devoted to the influence of hydrogen on these properties.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 167
Copyright
Copyright © Materials Research Society 1986

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References

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