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Chemical and Structural Analysis of Nitridated Sapphire

Published online by Cambridge University Press:  10 February 2011

Y. Cho ,
S. Rouvimov ,
Y. Kim ,
Z. Liliental-Weber  and
E. R. Weber
Y. Cho
Affiliation:
MSME Department, University of California, Berkeley, CA 94720 ycho@socrates.berkeley.edu
S. Rouvimov
Affiliation:
MSD, Lawrence Berkeley Laboratory, Berkeley, CA 94720
Y. Kim
Affiliation:
MSME Department, University of California, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
MSD, Lawrence Berkeley Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
MSME Department, University of California, Berkeley, CA 94720 MSD, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

The incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 45
Copyright
Copyright © Materials Research Society 1998

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