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Chemical Origin of the Grain Boundary Carrier Recombination in Silicon Bicrystals

Published online by Cambridge University Press:  28 February 2011

F. Battistella ,
A. Rocher  and
A. George
F. Battistella
Affiliation:
Laboratoire d'Optique Electronique du C.N.R.S. 29 rue Jeanne Marvig, 31400 TOULOUSE (FRANCE)
A. Rocher
Affiliation:
Laboratoire d'Optique Electronique du C.N.R.S. 29 rue Jeanne Marvig, 31400 TOULOUSE (FRANCE)
A. George
Affiliation:
Laboratoire de Physique du Solide de l'E.N.S.M.I.M. Parc de Saurupt, 54042 NANCY CEDEX (FRANCE)
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Abstract

The minority carrier recombination related to grain boundaries is studied by the SEM/EBIC technique. The specimens investigated are silicon bicrystals obtained by the Czochralski pulling process. The specimens are heated for 2 hours at 750°C in a neutral atmosphere. Heterogeneous recombination of the grain boundaries is then observed.

X-Ray topography and Transmission Electron Microscopy (TEM) have been performed to determine the origin of the heterogeneous recombination. A direct relationship between the local recombination along the grain boundary and the precipitates localized at the interface has been established. The chemical origin of the precipitates is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 347
Copyright
Copyright © Materials Research Society 1986

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References

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