Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-20T09:24:18.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition of Copper From Metal-Organic Copper(I) Phosphine Complexes

Published online by Cambridge University Press:  21 February 2011

H.-K. Shin ,
M.J. Hampden-Smith ,
T.T. Kodas ,
E.N. Duesler ,
J.D. Farr  and
M. Paffett
H.-K. Shin
Affiliation:
Departments of Chemistry, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131
M.J. Hampden-Smith
Affiliation:
Departments of Chemistry, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131
T.T. Kodas
Affiliation:
Chemical Engineering, University of New Mexico, Albuquerque, NM 87131 Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131
E.N. Duesler
Affiliation:
Departments of Chemistry, University of New Mexico, Albuquerque, NM 87131
J.D. Farr
Affiliation:
CLS-1 Los Alamos National Laboratories, Los Alamos, NM 87545.
M. Paffett
Affiliation:
CLS-1 Los Alamos National Laboratories, Los Alamos, NM 87545.
Get access

Abstract

A series of new, molecular copper(I) compounds with the general formula (β-diketonate)Cu(PMe3) have been prepared which are specifically designed as precursors for the CVD of copper. These species have been designed such that the effects of systematic ligand variations on the CVD process can be examined. The series of derivatives where β-diketonate is one of hexafluoroacetylacetonate, 3, trifluoroacetylacetonate, 4, or acetylacetonate, 5, have been prepared in high yield and are described here. A solid state X-ray diffraction study of 3 reveals that it is monomeric. Cryoscopic molecular weight determination and gas phase FTIR spectroscopy are also consistent with a monomeric structure in liquid and gas phases. Hot-wall CVD of copper from these precursors has been examined under various conditions. Auger electron spectroscopy indicates that the films all exhibit some degree of carbon contamination, but little contamination by oxygen, fluorine or phosphorus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 193
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hess, D.W. and Jensen, K.F., “Microelectronics Processing, Chemical Engineering Aspects”, Adv. in Chem. Series, 1989, Vol.221.Google Scholar
2. John, P. in “The Chemicals of the Semiconductor Industry” Eds. Moss, S.J. and Ledwith, A., Blackie and Son, Glasgow, 1987.Google Scholar
3.W: Broadbent, E.K. and Stacey, W.T., Solid State Technol., 28, 51, 1985: Proceedings of the 1988 Workshop on “Tungsten and Other Refractory Materials for VLSI Applications IV” Oct. 4–6, Albuquerque, NM, Eds. R.S. Blewer and C.M. McConica.Google Scholar
4.Al: Bent, B.E., Nuzzo, R.G. and Dubois, C.H., J. Am. Chem. Soc.,111 1634, 1989, and references therein.Google Scholar
5.Cu: Houle, F.A., Jones, C.R., Baum, T.H., Pico, C. and Kovac, C.A., Appl. Phys Lett. 46, 204, 1985.Google Scholar
6. Au: Baum, T.H. and Jones, C.R., Appl. Phys. Lett., 47, 5381, 1985: T.H. Baum and C.R. Jones, J. Vac. Sci. Technol., B., 48, 1187, 1986: T.H. Baum, E.E. Marinaro and C.R. Jones, Appl. Phys. Lett., 49, 1213, 1986.Google Scholar
7. Oehr, C. and Suhr, H., Appl. Phys., A., 45, 151, 1988: D. Temple and A. Reisman, Technical report number 4, Microelectronic Center of North Carolina, July 28th, 1988.Google Scholar
8. Jeffries, P.M. and Girolami, G.S., Chem. Mater., 1, 8, 1989.Google Scholar
9. Dupuy, C.G., Beach, D.B., Hurst, J.E. and Jasinski, J.M., Chem. Mat., 1, 16, 1989.Google Scholar
10. Hampden-Smith, M.J., Kodas, T.T., Paffett, M., Farr, J.D. and Shin, H.-K., Chem. Mat., Submitted for publication.Google Scholar