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Clamped Ferroelectric and Magnetic Domain Walls and their Application to Memory Engineering

Published online by Cambridge University Press:  01 February 2011

Eiichi Hanamura  and
Yukito Tanabe
Eiichi Hanamura
Affiliation:
Chitose Institute of Science and Technology and Japan Science and Technology Agency, Chitose, Hokkaido 066–8655 Japan
Yukito Tanabe
Affiliation:
Department of Applied Physics, University of Tokyo, Hongo, Tokyo 113–8656, Japan
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Abstract

A family of rare-earth metal manganites are antiferromagnetic (AFM) ferroelectrics and some of these may show also weak ferromagnetism. First we will show how to observe the ferroelectric (FEL) and AFM domain structures by the interference effects of second harmonic generation (SHG). Second, the observed clamping of the AFM domain wall (DW) to the FEL domain boundary (DB) is intuitively explained by the group theoretical consideration of the magnetic anisotropy energy depending upon the sign of the FEL polarization. Third, the application of these clamped DW-DB to the memory engineering will be briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 834: Symposium J – Magneto-Optical Materials for Photonics and Recording , 2004 , J6.4
Copyright
Copyright © Materials Research Society 2005

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References

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