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Coarsening of Ga2Se3 Islands on GaAs Substrates
Published online by Cambridge University Press: 25 February 2011
Abstract
The formation and growth of islands on GaAs substrates has been observed during high temperature (550°C) heat treatment of GaAs substrates in the presence of H2Se. We have used SEM, TEM and XPS to characterize these islands and we have proposed a mechanism for island formation based on coarsening of Ga on the substrate surface followed by reaction with H2Se to form Ga2Se3.
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- Copyright © Materials Research Society 1991