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Combined Room Temperature Photoluminescence And High Resolution X-Ray Diffraction Mapping Of Semiconductor Wafers

Published online by Cambridge University Press:  15 February 2011

S Cockerton ,
M L Cooke ,
D K Bowen  and
B K Tanner
S Cockerton
Affiliation:
now at SC Scientific, 3 Castle Meadows, Whittingham, Northumberland, NE66 4SH, UK
M L Cooke
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, U.K
D K Bowen
Affiliation:
also Department. of Engineering, Warwick University, Coventry, CV4 7AL, U.K
B K Tanner
Affiliation:
also Department of Physics, Durham University, South Road, Durham, DHJ 3LE, UK
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Abstract

We describe the characteristics and performance of a combined desk-side high resolution X-ray diffractometer and room temperature photoluminescence spectrometer designed for rapid mapping of compound semiconductors in a production line context. The combined data for AIGaAs on GaAs suggest that recent measurements of the lattice constant and the Poisson ratio of AlAs may be more reliable than earlier published values. We illustrate the instrument performance in showing that for lattice matched ternary GaInP on GaAs systems, the X-ray rocking curve maps are much more sensitive to composition variation than the photoluminescence spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 555
Copyright
Copyright © Materials Research Society 1996

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