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A Combined Thermodynamic and Kinetic Approach to the Metallization of GaAs

Published online by Cambridge University Press:  25 February 2011

Y. Austin Chang
Y. Austin Chang*
Affiliation:
Department of Materials Science and Engineering, 1509 University Avenue, Madison, WI 53706 USA
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Abstract

A combined thermodynamic/kinetic methodology was presented to give a rational approach to the metallization of n-GaAs when a reciprocal system of GaAs-MδsGa-MsM'-MAs exists. Fortunately, for many quaternary systems consisting of Ga-M-M'-As, such a reciprocal system does exist. This methodology may be used either for Schottky enhancement or ohmic contacts to n-GaAs. Two examples were used to illustrate the approach and preliminary results were given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 43
Copyright
Copyright © Materials Research Society 1992

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References

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