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Comparison of Cvd and Pvd Tungsten for Gigabit-Scale Dram Interconnections

Published online by Cambridge University Press:  15 February 2011

John M. Drynan  and
Kuniaki Koyama
John M. Drynan
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
Kuniaki Koyama
Affiliation:
ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The characteristics of blanket CVD-W and PVD-W films with and without TiN/Ti underlayers have been investigated in terms of both materials properties such as resistance, stress, morphology, crystallinity, and composition, and prospective applications such as for DRAM bit line interconnections. The presence of a TiN underlayer has been found to induce preferential growth of dominant W (110) crystal orientation for both CVD-W and PVD-W whereas absence of TiN results in a W film of mixed W (110), (200), and (211) crystallites. Sheet resistance measurements of both blank films and conductor lines have shown that a 200nm-thick PVD-W film yields a lower resistance than a similar film with TiN underlayer and hence larger total thickness. This correspondence of W (110) intensity with resistance implies that reduction of the (110) oriented crystallites within a W film can yield lower resistances. Thus, by elimination of the TiN/Ti underlayer, monolayer PVD-W or CVD-W with a PVD-W underlayer can be effectively adapted to quarter-micron conductors for bit line interconnections and related structures in DRAM memory and other ULSI devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 307
Copyright
Copyright © Materials Research Society 1996

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