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Comparison of Experiment and Theory of the Photoconductivity of a-Si:H up to a Generation Rate of 1028cm−3s−1

Published online by Cambridge University Press:  10 February 2011

P. Stradins ,
H. Fritzschei ,
P. Tzanetakis  and
N. Kopidakis
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL,60637
H. Fritzschei
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL,60637
P. Tzanetakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, 71110 Heraklion, Crete, Greece
N. Kopidakis
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL,60637
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Abstract

We have studied the dependence of the photoconductivity σp on photocarrier generation rate G in intrinsic a-Si:H at 300K between G=1012cm−3s−1 and 1028cm−3s−1. Below a certain value Go, we find σo =AGγ with γ=0.9±0.05 and the values of A vary considerably with defect concentration Nd which signifies monomolecular recombination through defects. Above Go the recombination is bimolecular, γ=0.5±0.02 and A=(6±3)×10−15 Ω−1cm1/2s1/2 is indpendent of Nd. The transition value Go is about 3×1020cm−3s−1 for high quality annealed a-Si:H and increases with Nd. A simulation of σp(G) assuming conduction in and recombination from extended states fits our experiments within a capture coefficient Ct=(6±2)×10−9cm3s−1 of carriers to their opposite tail states. Our Ct is close to the value (5±2)×10−9cm3s−1 obtained from optical measurements but higher than (0.5±0.1)×10−9cm3s−1 determined from photoelectric studies. Below T=150K our model calculations overestimate σp because the tunneling transitions, becoming important for recombination and conduction, are neglected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 729
Copyright
Copyright © Materials Research Society 1996

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References

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