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Comparison of TiN films produced by TDEAT (Ti[N(C2H5)2]4), TDMAT (Ti[N(CH3)2]4), and a new precursor TEMAT (Ti[N(CH3)C2H5]4)

Published online by Cambridge University Press:  15 February 2011

J-G Lee ,
J-H Kim ,
H-K Shin ,
S-J Park ,
S-J Yun  and
G-H Kim
J-G Lee
Affiliation:
Department of Metallurgical Engineering, KOOKMIN University, Joengneung-dong, Sungbuk-ku, Seoul, Korea 136-702
J-H Kim
Affiliation:
Department of Metallurgical Engineering, KOOKMIN University, Joengneung-dong, Sungbuk-ku, Seoul, Korea 136-702
H-K Shin
Affiliation:
UPChem. INC. Jang Yeon Bldg. 325-5 Wonchun-dong, Paldal-gu, Suwon 136-702
S-J Park
Affiliation:
APEX Co., Ltd. 81-18, Ohjung-dong, Daeduk-gu, Daejun, Korea 306-010
S-J Yun
Affiliation:
ETRI, 161 Kajong-dong, Yusong-gu, Taeijon, Korea 305-360
G-H Kim
Affiliation:
ETRI, 161 Kajong-dong, Yusong-gu, Taeijon, Korea 305-360
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Abstract

TiN films have been deposited by chemical vapor deposition (CVD) from a new TiN precursor, tetrakis(ethylmethylamino)titanium (TEMAT), and compared with those from tetrakis(diethylamino)titanium (TDEAT) and tetrakis(dimethylamino)titanium (TDMAT) in terms of film quality and conformality. The TDEAT process at 350°C provides films with low resistivity of ˜2500μΩ-cm and 30% carbon. In addition, films deposited from TDEAT contain no oxygen and show good stability in resistivity with time. Furthermore, this process provides bottom-coverage ranging from 65% at 275°C to 30% at 350°C. In contrast, excellent bottom-coverage of ˜90% over 0.5μΩ contact holes is obtained by the TDMAT process. However, films deposited from TDMAT are air-reactive upon air-exposure, resulting in a large increase in resistivity when exposed to air. The use of TEMAT, possessing physical properties between those of TDMAT and TDEAT, allows less air-reactive and better crystalline films, compared with TiN films from TDMAT. It is also observed that the carbon level is ˜2x lower than that in TiN films from TDEAT. Futhermore, this process provides good step-coverage in 0.35μΩ contacts with an aspect ratio of 2.9. Consequently, the TEMAT process can be an attractive choice for sub-0.5 μΩ application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 371
Copyright
Copyright © Materials Research Society 1996

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