Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-15T20:20:39.197Z Has data issue: false hasContentIssue false
  • English
  • Français

A Complementary Wafer Cleaning and Growth Process for Low Temperature, Defect Free, Selective Silicon Epitaxy

Published online by Cambridge University Press:  25 February 2011

Jon T. Fitch  and
Dean J. Denning
Jon T. Fitch
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
Dean J. Denning
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
Get access

Abstract

Low temperature (<850°C) defect free selective silicon epitaxy has been achieved with a conventional barrel type reactor (base pressure -10−4 Torr) using complementary cleaning and growth processes: a wet multi-step oxidizing clean, and a novel non-steady state CVD growth process. With this combination of cleaning and growth processes, it is shown that the need for a high temperature (950-1000°C) insitu native oxide removal step, which may be incompatible with advanced VLSI process integration, is eliminated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 487
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yamada, T. et.al., IEDM, 35 (1989).Google Scholar
[2] Semiconductor International, August 1991, p. 19.Google Scholar
[3] Schubert, P.J. and Neudeck, G.W., IEEE 37(11), 2336 (1990).Google Scholar
[4] Ermolieff, A., Marthon, S., Bertin, F., Pierre, F., Daviet, J.F., and Peccoud, L., J. Vac. Sci. Technol., A9(6), 2900 (1991).CrossRefGoogle Scholar
[5] Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133(4), 666 (1986).CrossRefGoogle Scholar
[6] Semiconductor International, December 1990, p. 18.Google Scholar
[7] SOLGASMIX-PV For The PC, B.W. Sheldon, Oak Ridge National Laboratory, 1989.Google Scholar
[8] Hunt, L.P. and Sirtl, E., J. Electrochem. Soc., 119, 1741 (1972).CrossRefGoogle Scholar
[9] Lever, R.F., IBM Journal, 465 (1964).Google Scholar