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Complex defect behavior in Cu(In,Ga)Se2 solar cells with different gallium content
Published online by Cambridge University Press: 01 February 2011
Abstract
We report on capacitance spectroscopy measurements on Cu(In,Ga)Se2 based solar cells where the gallium content was varied systematically. In all samples we found, depending on the measurement conditions, a minority carrier and/or a majority carrier signal. The minority trap can be attributed to the prominent donor-like state N1 or â already discussed in literature. However, the origin of the majority trap remains unclear.
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- Copyright © Materials Research Society 2005