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Compound Formation in Pd Metallized Strained Layers of Sige on Si

Published online by Cambridge University Press:  26 July 2012

A. Buxbaum ,
M. Eizenberg ,
A. Raizmann  and
F. Schaffler
A. Buxbaum
Affiliation:
Department of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa, Israel.
M. Eizenberg
Affiliation:
Department of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa, Israel.
A. Raizmann
Affiliation:
Soreq Nuclear Research Center, Yavne, Israel.
F. Schaffler
Affiliation:
Daimler-Benz AG, Forschungsinstitut Ulm, Germany.
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Abstract

In this paper we report on the formation of compounds following the interaction of Pd with strained epitaxial layers of Si1−xGex (x=0.18) MBE grown on Si( 100), in the temperature range of 200 to 650°C. Compositional and structural analyses show that the dominant compound formed was an hexagonal ternary phase, Pd2Si1−yGey where the value of y is lower than of x, and varies with the reaction temperature. In addition to the ternary phase, the binary phase PdGe was also detected. The hexagonal compound grew in a textured manner with its c-axis oriented along the [100] direction of the Si1−xGex film. High temperature anneals (T≥550°C) resulted in the formation of a double layered structure, with the silicide/germanide compound layer on the surface, and below it a Ge rich epitaxial Si1−xGex layer. Strain relaxation of the unreacted layer occurred for specimens in which the double layer structure appeared (annealing temperature ≥550°C). A mechanism for the formation of the double layered structure is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 151
Copyright
Copyright © Materials Research Society 1992

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