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Computer Simulation of Thermal Annealing Effects on Self Implanted Silicon

Published online by Cambridge University Press:  16 February 2011

G. DE Sandre ,
L. Colombo  and
D. Maric
G. DE Sandre
Affiliation:
Dip. di Ingegneria Nucleare, Politecnico di Milano, via Ponzio 38, 1-20133 Milano, (Italy)
L. Colombo
Affiliation:
Dipartimento di Fisica, Universita' di Milano, via Celoria 16, 1-20133 Milano, (Italy)
D. Maric
Affiliation:
CSCS, via Cantonale, CH-6928 Manno, (Switzerland)
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Abstract

We investigate the effects of thermal annealing on the structural, elastic and electronic properties of self implanted silicon by tight binding molecular dynamics. The irradiated samples, after a careful relaxation at room temperature, are annealed at different temperatures and for different times and, finally, their properties are carefully monitored during constant temperature simulations. We further provide a characterization of the chemical bonding in the amorphous network and show the evolution of the point defect distribution against maximum annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 463
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Eckstein, W., Computer simulations of ion-solid interactions, Springer Series in Materials Science, vol. 10 (Springer-Verlag, Heidelberg, 1991)Google Scholar
[2] Hsieh, H. and Yip, S., Phys. Rev. Lett. 59, 2760 (1987); ibid Phys. Rev. B39, 7476 (1989)Google Scholar
[3] Motooka, T., Phys. Rev. B49, 16367 (1994)Google Scholar
[4] Wang, C.Z., Chang, C.T. and Ho, KM., Phys. Rev. Lett. 66, 189 (1991)Google Scholar
[5] Maric, D. and Colombo, L., Mat. Res. Soc. Symp. Proc. 316, 223 (1994)Google Scholar
[6] Colombo, L. and Maric, D., submitted for publication (1994)Google Scholar
[7] Colombo, L., in Proceeding of the Physics Computing '94 Conference, edited by Gruber, R. and Tomassini, M. (Lugano, 22-26 August, 1994)Google Scholar
[8] Servalli, G. and Colombo, L., Europhys. Lett. 22, 107 (1993)Google Scholar
[9] Panzarini, G. and Colombo, L., Phys. Rev. Lett. 73, 1636 (1994)Google Scholar
[10] Waseda, Y. and Suzuki, K., Z. Phys. B20, 339 (1975)Google Scholar
[ 11] Tetrahedrally bounded amorphous semiconductors, edited by Adler, D. and Fritzsche, K. (plenum, New York, 1985)Google Scholar
[12] Lutsko, J.F., J. Appl. Phys. 65, 2991 (1989)Google Scholar
[13] Landolt-Bornstein, Crystal and Solid State Physics, vol.11, edited by -Hellwege, K. (Springer, Berlin, 1979)Google Scholar
[14] Stillinger, F.H. and Weber, T.A., Phys. Rev. B31, 5262 (1985)Google Scholar
[15] Bhadra, B., Pearson, J., Okamoto, P., Rehn, L. and Grimsditch, M., Phys. Rev. B38, 12656 (1988)Google Scholar