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Conductivity Measurements on GaN Grown by OMVPE and HVPE

Published online by Cambridge University Press:  21 February 2011

M. Ben-Chorin
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
J. Diener
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
B.K. Meyer
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
M. Drechsler
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
D. Volm
Affiliation:
Technical University, Munich, Department of Physics, 85747 Garching, Germany
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
T. Detchprohm
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 468-01, Japan
K. Hiramatsu
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 468-01, Japan
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Abstract

We report on conductance and cyclotron resonance (CR) experiments on GaN epitaxial films grown by the OMVPE and HVPE techniques. From a precise determination of the electron effective mass the donor binding energy in the effective mass approximation (EMT) is calculated. We obtain 31.7 meV. The transport experiments on the HVPE films show that the conductance is thermally activated with an activation energy of 15 meV in contrast to the OMVPE films which showed temperature independent conductivity for temperatures between 4 and 100 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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