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The Confinement Profile of As-Grown Movpe AlGaAs/GaAs Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

W. C. H. Choy ,
P. J. Hughes  and
B. L. Weiss
W. C. H. Choy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
P. J. Hughes
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B. L. Weiss
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
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Abstract

Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 425
Copyright
Copyright © Materials Research Society 1997

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References

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