Hostname: page-component-84b7d79bbc-rnpqb Total loading time: 0 Render date: 2024-07-26T19:01:58.600Z Has data issue: false hasContentIssue false

Constant Depth DLTS Measurements on Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

David Denenberg
Affiliation:
Lehighton Electronics. Inc., P.O. Box 328, Lehighton, PA 18235
Austin Blew
Affiliation:
Lehighton Electronics. Inc., P.O. Box 328, Lehighton, PA 18235
Get access

Abstract

This paper describes a useful measuring technique enabling Deep Level Transient Spectroscopy [DLTS] on compound semi-conductors. We will report on the methodology of DLTS measurements using newly available software for Miller Feedback Profilers. This method has the advantages of using the constant depth capabilities of the profiler. The combination instrument offers flexibility in limited clean room space.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lang, D. V., J. Appl Phys. 45, 3023 (1974)Google Scholar
[2] Farmer, J., Notes re MODBOX. 1991 Google Scholar
[3] Sah, C. T., Forbes, L., Rosier, L. L., and Tasch, A. F. Jr, Solid State Commun. 13, 289 (1970)Google Scholar
[4] Buehler, M. G., Solid State Electronics 15, 69 (1972)Google Scholar
[5] Sah, C. T. and Walkaer, J. W., Appl. Physics Lett. 22, 384 (1973)CrossRefGoogle Scholar
[6] Miller, G. L., IEEE Trans Electron Devs. ED-19, 1103 (1971)Google Scholar
[7] Wiley, J., LEI appl Note No. 83, 1985 Google Scholar
[15] Enfemann, J. and Heime, K., CRC Crit. Rev. Solid State Sci., 5, 485, (1975)CrossRefGoogle Scholar