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Contactless Evaluation of the Surface Recombination Property of Silicon with an Ion-Implanted Layer

Published online by Cambridge University Press:  26 February 2011

Akira Usami ,
Takanori Makino ,
Hideaki Yoshida  and
Etsuro Morita
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Takanori Makino
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Hideaki Yoshida
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, JAPAN
Etsuro Morita
Affiliation:
Mitsubishi Materials Silicon Co., Ltd., Nishisangao, Noda 278, JAPAN
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Abstract

The surface properties of silicon are investigated by the noncontact laser (λ=774nm)/microwave method. The effective surface recombination velocity (Seff) at an n+n high-low junction interface is estimated by fitting the experimental decay curve for excess carriers with the theoretical decay curve. The results show that Seg decreases as the dopant concentration increases and that Seff at the n+n high-low junction formed with a dose of 1×l015 ions/cm2 has values lower than 1 cm/s. And it is shown that Scff is inversely proportional to the potential barrier height of the n+n high-low junction. Similar results are obtained using an N2 laser (λ=337.1nm) instead of a laser diode (λ=774nm, 904nm) as a carrier excitation pulse source.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 641
Copyright
Copyright © Materials Research Society 1995

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