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A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays

Published online by Cambridge University Press:  09 January 2014

H. von Wenckstern ,
Z. Zhang ,
J. Lenzner ,
F. Schmidt  and
M. Grundmann
H. von Wenckstern
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
Z. Zhang
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
J. Lenzner
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
F. Schmidt
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
M. Grundmann
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany
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Abstract

Continuous composition spread (CCS) methods have been very successfully used for exploiting and optimization of new material systems. Concerning sample growth by pulsed-laser deposition (PLD) approaches towards thin films with a CCS are involved, here movable masks for partial shadowing of the substrate and multiple targets are needed to obtain linearly varying changes of composition. Here we make use of an approach allowing deposition of thin films with CCS at high growth rates by using segmented PLD targets. We describe how this approach can be used to fabricate monolithic, wavelength-selective multichannel UV-photo-detector arrays.

Keywords

sensordevicesII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 123 - 129
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

von Wenckstern, H, Zhang, Z., Schmidt, F., Lenzner, J., Hochmuth, H. and Grundmann, M., CrystEngComm 15, 10020 (2013)CrossRefGoogle Scholar
Christen, H. M., Silliman, S. D., and Harshavardhan, K. S., Rev. Sci. Instrum., 2001, 72, 2673.CrossRefGoogle Scholar
Lajn, A., von Wenckstern, H., Zhang, Z., Czekalla, C., Biehne, G., Lenzner, J., Hochmuth, H., Lorenz, M., Grundmann, M., Künzel, S., Vogt, C., Deneke, R., J. Vac. Sci. Technol. B 27, 1769 (2009)CrossRefGoogle Scholar
Zhang, Z., von Wenckstern, H., Schmidt, M. and Grundmann, M., Appl. Phys. Lett. 99, 083502 (2011)CrossRefGoogle Scholar
Zhang, Z., von Wenckstern, H. and Grundmann, M., Appl. Phys. Lett. 103, 171111 (2013)CrossRefGoogle Scholar