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Contribution of the Nanocrystallites and Their Interfaces to the Optical Response of Porous Silicon Layers

Published online by Cambridge University Press:  28 February 2011

U. Rossow ,
U. Frotscher ,
W. Richter ,
H. Muender ,
M. Thoennissen  and
M. Berger
U. Rossow
Affiliation:
North Carolina St. Univ., Phys. Dept, Raleigh, NC 27695-8202
U. Frotscher
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
W. Richter
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
H. Muender
Affiliation:
KFA Juelich, D-52425 Juelich, Germany
M. Thoennissen
Affiliation:
KFA Juelich, D-52425 Juelich, Germany
M. Berger
Affiliation:
KFA Juelich, D-52425 Juelich, Germany
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Abstract

We discuss the dependence of the dielectric function on the nanocrystalline size of porous silicon layers. The layers were grown by a standard electrochemical process and characterized by spectroscopic ellipsometry. By a lineshape analysis values of the critical point energies and broadening parameters of the Interband critical points were derived. In order to obtain further information about the nanocrystallites, the preparation conditions were varied (HF concentration, NH4F was added) or the layers were further treated by etching and arsenic deposition. The lineshape analysis values indicate that the layers consist mainly of nanocrystallites, or more accurately, that the electrons are confined to regions of a few nanometers in size. Furthermore, there is strong indication that some preparation conditions may leave these nanocrystallites heavily strained .

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 429
Copyright
Copyright © Materials Research Society 1995

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References

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