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Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD
Published online by Cambridge University Press: 28 February 2011
Abstract
CO2 laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone.
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