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Control of Emissive Layer Interfaces with Inorganic Thin Layer Between 8-Hydroxyquinoline Aluminum and Diamine Layers in Organic El Diode

Published online by Cambridge University Press:  10 February 2011

Yutaka Ohmori
Affiliation:
Osaka University, Department of Electronic Engineering, Yamada-oka, Suita, Osaka 565, Japan, ohmori@ele.eng.osaka-u.ac.jp
Yoshitaka Kurosaka
Affiliation:
Osaka University, Department of Electronic Engineering, Yamada-oka, Suita, Osaka 565, Japan, ohmori@ele.eng.osaka-u.ac.jp
Norio Tada
Affiliation:
Osaka University, Department of Electronic Engineering, Yamada-oka, Suita, Osaka 565, Japan, ohmori@ele.eng.osaka-u.ac.jp
Akihiko Fujii
Affiliation:
Osaka University, Department of Electronic Engineering, Yamada-oka, Suita, Osaka 565, Japan, ohmori@ele.eng.osaka-u.ac.jp
Katsumi Yoshino
Affiliation:
Osaka University, Department of Electronic Engineering, Yamada-oka, Suita, Osaka 565, Japan, ohmori@ele.eng.osaka-u.ac.jp
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Abstract

Control of organic interfaces by insertion of a thin inorganic film (SiO) has been investigated for an organic electroluminescent (EL) diode which consists of 8-hydroxyquinoline aluminum (Alq3) and diamine derivative (TPD). In order to evaluate optical quality of the emissive layer at the interface, thin film of emissive marker layer was inserted into the emissive layer at the interface between the emissive layer and the carrier transport layer. The EL emission spectrum and the optical characteristics have been discussed for the EL diode with and without inorganic film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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