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Control of Ferroelectric Properties of PbZrxTi1−xO3 Thin Film for Electron Emission Device Driven by Low Voltage

Published online by Cambridge University Press:  10 February 2011

Y. Yamagata ,
M. Yamazato ,
T. Ikegami ,
K. Ebihara ,
J. Narayan  and
A.M. Grishin
Y. Yamagata
Affiliation:
Dept. of Electrical and Computer Engineering, Kumamoto Univ., Kumamoto 860-8555, JAPAN
M. Yamazato
Affiliation:
Dept. of Electrical and Computer Engineering, Kumamoto Univ., Kumamoto 860-8555, JAPAN
T. Ikegami
Affiliation:
Dept. of Electrical and Computer Engineering, Kumamoto Univ., Kumamoto 860-8555, JAPAN
K. Ebihara
Affiliation:
Dept. of Electrical and Computer Engineering, Kumamoto Univ., Kumamoto 860-8555, JAPAN
J. Narayan
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, 2147 Burlington Labs., Raleigh, NC 27695-7916
A.M. Grishin
Affiliation:
Dept. of Condensed Matter Physics, Royal Inst. of Technology, S-100 44 Stockholm, Sweden
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Abstract

Epitaxial PbZr0.52TiO0.48O3/YBa2Cu3O7−x heterostructures on Nd:YAlO3 and MgO substrates were fabricated by KrF pulsed laser deposition. The coercive electric field of the PZT films increased with decrease of the film thickness from 1.2 μm to 0.04 μm, while the magnitude of spontaneous polarization was almost constant in this thickness range. It was found that the dependence of the film thickness d on the coercive electric field Ec was Ecæ d−2/3. This results from that the PZT/YBCO heterostructure has the one dimensional ferroelectric domain growth without non-ferroelectric phase. The polarization of AuIPZT/YBCO/(MgO or YAlO) capacitors can be changed by the applied voltage below 5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 759
Copyright
Copyright © Materials Research Society 1999

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References

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