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Controlled Impurity Introduction In CVD: Chemical, Electrical, and Morphological Influences

Published online by Cambridge University Press:  22 February 2011

T. F. Kuech ,
J. M. Redwing ,
J.-W. Huang  and
S. Nayak
T. F. Kuech
Affiliation:
University of Wisconsin, Department of Chemical Engineering, 1415 Johnson Drive, Madison, WI 53706
J. M. Redwing
Affiliation:
University of Wisconsin, Department of Chemical Engineering, 1415 Johnson Drive, Madison, WI 53706
J.-W. Huang
Affiliation:
University of Wisconsin, Department of Chemical Engineering, 1415 Johnson Drive, Madison, WI 53706
S. Nayak
Affiliation:
University of Wisconsin, Materials Science Program, 1415 Johnson Drive, Madison, WI 53706
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Abstract

We present here an overview of recent studies of the influence of oxygen doping on the electrical and structural properties of semiconductors grown through the metal organic vapor phase epitaxy (MOVPE) technique. In particular, we have measured the impact of oxygen introduction on several of the principal aspects of the growth process: incorporation, activation, and influence on the growing surface structure. The gas phase chemistry and dopant incorporation was investigated for two different precursors: dimethyl aluminum methoxide and diethyl aluminum ethoxide. The simple change in the structure of the oxygen source leads to significant changes in the oxygen incorporation behavior. Complementary studies of the gas phase decomposition of these oxygen sources have indicated that the decomposition mechanism is substantially different for these two sources leading to the change in incorporation behavior. The impact of the selective incorporation of oxygen at heterointerfaces has been studied here through the growth of superlattice structures. Glancing angle X-ray diffraction and atomic force microscopy measurements have shown that the incorporation of oxygen at the GaAs-to-AlxGaI-x As interface leads to modest increases in the average roughness of the heterointerface with more significant changes in the interfacial structure. The structure of this interfacial roughness was also studied through measurements of the diffuse X-ray scattering about a Bragg peak. Measurements of the component of the roughness which is correlated between the superlattice layers show significant changes with oxygen addition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 189
Copyright
Copyright © Materials Research Society 1994

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References

references

1. Kuech, T. F., Wolford, D. J., Veuhoff, E., Deline, V., Mooney, P. M., Potemski, R., and Bradley, J., J. Appl. Phys. 62, 632 (1987).Google Scholar
2. Kuech, T. F., Veuhoff, E., Kuan, T. S., Deline, V., and Potemski, R., J. Crystal Growth 77, 257 (1986).Google Scholar
3. Terao, H. and Sunakawa, H., J. Crystal Growth 68, 157 (1984).Google Scholar
4. Stringfellow, G. B. and Hom, G., Appl. Phys. Lett. 34, 794 (1979).CrossRefGoogle Scholar
5. Wallis, R. H., Poisson, M-A di Forte, Bonnet, M., Beuchet, G. and Duchemin, J-P, Inst. Phys. Conf. Ser. 56, 73 (1981).Google Scholar
6. Goorsky, M. S., Kuech, T. F., Cardone, F., Mooney, P. M., Scilla, G. J., and Potemski, R. M., Appl. Phys. Lett. 58, 1979 (1991).Google Scholar
7. Huang, J. W., Gaines, D. F., Kuech, T. F., Potemski, R. M., and Cardone, F., presented at the 1993 EMC, Santa Barbara, CA, 1993.Google Scholar
8. Davidson, N. and Brown, H. C., J. Am. Chem. Soc. 64, 316 (1942).Google Scholar
9. Aspnes, D.E., Bhat, R., Colas, E., Florez, L.T., Gregory, S., Harbison, J.P., Kamiya, I., Quinn, W.E., Scwartz, S.A., Tanaka, H. and Wassermeier, M., Mat. Res. Soc. Proc. 222, 63 (1991).Google Scholar
10. Fuoss, P.H., Kisker, D.W., Renaud, G., Tokuda, K.L., Brennan, S. and Kahn, J.L., Phys. Rev. Lett. 63, 2389 (1989).Google Scholar
11. Gilmer, G.H., J. Crystal Growth 49, 465 (1980).Google Scholar
12. Redwing, J. M., Kuech, T.F., Saulys, D., and Gaines, D.F., to be published in J. Crystal Growth.Google Scholar
13. Savage, D.E., Kleiner, J., Schimke, N., Phang, Y.H., Jankowski, T., Jacobs, J., Kariotis, R. and Lagally, M.G., J. Appl. Phys. 69, 1411 (1991).CrossRefGoogle Scholar
14. Savage, D.E., Schonke, N., Phang, Y.H. and Lagally, M.G., J. Appl. Phys. 71, 3283 (1992).Google Scholar
15. Phang, Y.H., Savage, D.E., Kuech, T.F., Lagally, M.G., Park, J.S. and Wang, K.L., Appl. Phys. Lett. 60, 2988 (1992).Google Scholar
16. Kuech, T. F., Potemski, R., Cardone, F., and Scilla, G., J. Electron. Mater. 21, 341 (1992).Google Scholar
17. Huang, J. W. and Kuech, T. F., presented at 1993 MRS Fall Meeting, Boston, MA, 1993 (to be published).Google Scholar
18. CRC Handbook of Chemistry and Physics, 65th Edition (CRC Press, Inc. 1984).Google Scholar
19. Jones, A.C., J. Crystal Growth 129, 728 (1993).Google Scholar
20. Knacke, O., Kubaschewski, O., and Hesselmann, K., eds., Thermochemical Properties of Inorganic Substances, 2nd ed(Springer-Verlag Berlin, Heidelberg, Germany, 1991).Google Scholar