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Controlled Modifications in the Electrical Properties of Metal/GaAs Junctions

Published online by Cambridge University Press:  25 February 2011

M. Eizenberg
M. Eizenberg*
Affiliation:
Dept. of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa, Israel.
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Abstract

Controlled modifications in the electrical properties of metal/GaAs junctions were obtaind by a few different approaches. The first approach is based on modifications induced by solid state reactions occurring between the metal and GaAs substrate, resulting in compound formation and component redistribution. The characteristics of such contacts can further be modified when the contact metal is alloyed with another metal or with a dopant. The second approach is based on modifying the doping level of the near surface region of the GaAs. Here an enhancement of the barrier height was obtained by heavily counter doping the top GaAs region by recoil implantation of Mg from a Mg thin film irradiated by As− ions. The correlations between the electrical properties of the junctions and the physical processes taking place using the above mentioned approaches are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 209
Copyright
Copyright © Materials Research Society 1990

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References

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