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Core and Valence Levels in Hydrogemated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

N. A. Burnhara ,
R. F. Fisher ,
S. E. Asher ,
L. L. Kazmerski ,
G. Lucovsky  and
G. N. Parsons
N. A. Burnhara
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
R. F. Fisher
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
S. E. Asher
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
L. L. Kazmerski
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
G. Lucovsky
Affiliation:
North Carolina State University, Raleigh, NC 27650
G. N. Parsons
Affiliation:
North Carolina State University, Raleigh, NC 27650
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Abstract

Silicon core and valence levels were studied in hydrogenated amorphous silicon (a-Si:H) as a function of hydrogen concentration. The techniques used to establish the core levels were X-ray Photoelectron Spectroscopy and core-level Electron Energy Loss Spectroscopy. Changes in the local densities of states of the silicon 3s and 3p levels were examined with Auger Electron Spectroscopy. The a-Si:H samples were grown by RF sputtering. Their hydrogen concentrations varied from zero to nearly fifteen percent.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 691
Copyright
Copyright © Materials Research Society 1987

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References

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