Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-11T03:19:25.572Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation among the ionization potential, built-in potential, and the open-circuit voltage of multi-layered organic photovoltaic devices

Published online by Cambridge University Press:  02 March 2011

Eiji Itoh  and
Toshiki Shirotori
Eiji Itoh
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553,
Toshiki Shirotori
Affiliation:
Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553,
Get access

Abstract

We have investigated the current-voltage characteristics of the multi-layered photovoltaic devices consisting of ITO/oxide /p-type (donor)/fullerene/ bathocuproine (BCP)/ Al structures. We chose various p-type (donors) small molecules and polymers in order to tune the values of ionization potential (IP) of donor molecules. The open-circuit voltage (Voc) increases with the increment of IP of donor materials. However, VOC was limited at ~0.6-0.7V for the devices without oxide layer. On the other hand, the VOC increases up to 0.9V for the devices with NiO and to ~ 1.1V for the devices with MoOX as a hole extraction buffer layer, respectively. We also estimated the work-function differences between Al and the oxide as 0.7, 0.9-1.0, and 1.2-1.3 eV for the device without oxide, with NiO, and with MoOX, respectively. We therefore concluded the value of VOC is limited by the lower part of VOC and energy difference between the LUMO of fullerene and the HOMO of donor ΔE.

Keywords

photovoltaicorganicelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e08-08
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Peumans, P., Yakimov, A., and Forrest, S. R., J. Appl. Phys. 93, 3693 (2003).Google Scholar
2. Xue, J., Uchida, S., Rand, B. P., and Forrest, S. R., Appl. Phys. Lett. 84, 3013 (2004).Google Scholar
3. Nelson, J., Kirkpartrick, J., and Ravirajan, P., Phys. Rev. B. 69, 035337 (2004).Google Scholar
4. Hiramoto, M. and Sakai, K., Proc. SPIE 7052, 70520H (2008).Google Scholar
5. Rand, B. P., Burk, D. P., and Forrest, S. R., Phys. Rev. B 75, 115327 (2007).Google Scholar
6. Bradec, C. J., Sariciftci, N. S., and Hummelen, J. C., Adv. Func. Mater. 11, 15 (2001).Google Scholar
7. Taima, T., Sakai, J., Yamarani, T., and Saito, K., Jpn. J. Appl. Phys. 45, L995 (2006).Google Scholar
8. Kim, J. Y., Kim, S. H., Lee, H., Lee, K., Ma, W., Gong, X., and Heeger, A. J., Adv. Mater. 18, 572 (2006).Google Scholar
9. Kim, J. Y., Lee, K., Coates, N. E., Moses, D., Nguyen, T., Dante, M., and Heeger, A. J., Science 317, 222 (2007).Google Scholar
10. Cai, W., Gong, X., and Cao, Y., Sol. Energy Mater. Sol. Cells 94, 114 (2010).Google Scholar
11. Shrotriya, V., Li, G., Yao, Y., Chu, C. W., and Yang, Y., Appl. Phys. Lett. 88, 073508 (2006).Google Scholar
12. Oyamada, T., Sugawara, Y., Terao, Y., Sasabe, H., and Adachi, C., Jpn. J. Appl. Phys. 46, 1734 (2007).Google Scholar
13. Kinoshita, Y., Takenaka, R., and Murata, H., Appl. Phys. Lett. 92, 243309 (2008).Google Scholar
14. Han, S., Shin, W. S., Seo, M., Gupta, D., and Moon, S. J., Org. Electron. 10, 791 (2009).Google Scholar
15. Irwin, M. D., Buchholz, D. B., Hains, A. W., Chang, R. P. H., and Marks, T. J., Proc. Nati. Acad. Sci. U.S.A. 105, 2783 (2008).Google Scholar
16. Itoh, E. and Iwamoto, M.: J. Appl. Phys. 81, 1790 (1997).Google Scholar
17. Itoh, E., Kokubo, H., Iwamoto, M., Burghard, M., Roth, S., and Hanack, M., Jpn. J. Appl. Phys. 37, 577 (1998).Google Scholar
18. Scheidt, H., Glöbl, M., and Dose, V., Surface Science 112, 97 (1981).Google Scholar
19. Harima, Y., Furusho, S., Okazaki, K., Kunugi, Y., and Yamashita, K., Thin Solid Films 300, 213 (1997).Google Scholar
20. Harima, Y., Furusho, S., Kunugi, Y., and Yamashita, K., Chem. Phys. Lett. 258, 213 (1996).Google Scholar
21. Miyairi, K., Itoh, E., and Hashimoto, Y., Thin Solid Films 438-439, 147(2003).Google Scholar
22. Itoh, E., Higuchi, Y., Furihata, D., and Shirotori, T., To be published in Jpn. J. Appl. Phys. (2011).Google Scholar
23. Itoh, E., Higuchi, Y., and Furihata, D., To be published in IEICE Transactions on Electronics, E94-C (2011).Google Scholar