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Correlation Between Minority Carrier Diffusion Length and Microstructure in a-Si:H Thin Films

Published online by Cambridge University Press:  01 January 1993

G. Conte ,
G. Fameli ,
A. Rubino ,
E. Terzini ,
F. Villani ,
D. Caputo ,
G. De Cesare ,
F. Irrera ,
F. Palma  and
M.C. Rossi
G. Conte
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy
G. Fameli
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy
A. Rubino
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy
E. Terzini
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy
F. Villani
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy
D. Caputo
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana 18, 00184 Roma, Italy
G. De Cesare
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana 18, 00184 Roma, Italy
F. Irrera
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana 18, 00184 Roma, Italy
F. Palma
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana 18, 00184 Roma, Italy
M.C. Rossi
Affiliation:
Centro Ricerche Fotovoltaiche, P.O.Box 32, 80055 Portici (Na),Italy Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana 18, 00184 Roma, Italy
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Abstract

Aim of this work is to investigate the opto-electronic properties of amorphous hydrogenated silicon (a-Si:H). The deposition temperature nas been used as a driving force to modify the morphology and bonded hydrogen distribution. The influence of the hydrogen microstructure on the carriers μτ product has been examined. The majority and minority carrier μτ have been evaluated from the diffusion length measurement, by using the Steady State Photocarrier Grating (SSPG) technique, and from the photoconductivity in the steady state condition (SSPC). The μτ values have been correlated with the defect density and the Fermi level position. Some considerations are proposed to explain the carrier transport in terms of the compositional inhomogeneities in Si:H alloys due to the morphological variations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 485
Copyright
Copyright © Materials Research Society 1993

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References

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