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Corrosion of Aluminum Interconnect Passivated with Polyimide or Silicon Nitride

Published online by Cambridge University Press:  21 February 2011

R. B. Comizzoli ,
R. L. Opila  and
Y. H. Wong
R. B. Comizzoli
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. L. Opila
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Y. H. Wong
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Extract

Polyimides have been considered the most promising organic polymers for use as an inner-layer dielectric or over-metal passivation layer on ICs. These polymers have certain processing advantages over traditional inorganic dielectrics such as SiO2 or Si3N4. However, polyimide (PI) must meet the stringent standards that inorganic materials have met, including good adhesion to the substrate and resistance to diffusion of water. Failure to meet these standards may result in increased aluminum corrosion rate and consequent degraded reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 154: Symposium K – Electronic Packaging Materials Science IV , 1989 , 277
Copyright
Copyright © Materials Research Society 1989

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References

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