Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

Taek Kim; Myung C. Yoo; Taeil Kim

doi:10.1557/PROC-449-1061

Abstract

We report new Cr/Ni/Au and Ni/Cr/Au tri-layer metallization schemes for achieving low resistance ohmic contacts to moderately doped p- (∼1 × 1017/cm3), and n-GaN (∼1 × 1018/cm3) respectively. The metallizations were thermally evaporated on 2 μm-thick GaN layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Comparisons with bi-layer metallizations such as Ni/Au and Cr/Au were also made. The Cr/Ni/Au contacts showed a low specific contact resistivity of 9.1 × 10−5 Ω⋅cm2 to n-GaN while that of Ni/Cr/Au to p-GaN was 8.3 × 10−2 Ω⋅cm2. The Ni/Cr/Au contacts also showed a low specific contact resistivity of 2.6 × 10−4 Ω⋅cm2 to n-GaN. The Ni/Cr/Au metallization could made reasonable ohmic contacts to p- and n-GaN simultaneously

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Article contents

Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

Abstract

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References

REFERENCES

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

Abstract

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References

REFERENCES

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