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Crystallization and Electrical Properties of Bi4TiO12 Films Derived from Bismuth Acetate and Bismuth Nitrate Precursor Solutions

Published online by Cambridge University Press:  10 February 2011

Chang Jung Kim ,
C. W. Chung  and
Kyu Sang Lee
Chang Jung Kim
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyungki 440-600, Korea
C. W. Chung
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyungki 440-600, Korea
Kyu Sang Lee
Affiliation:
Dept. of Chemistry, Inha Univ., Inchon 402-751, Korea.
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Abstract

Ferroelectric Bi4Ti3O12 thin films were prepared by the sol-gel method to examine the effect of precursors on the variation of ferroelectric properties. Two kinds of Bi4Ti3O12 sol-gel precursor solutions were synthesized by dissolving bismuth acetate and bismuth nitrate in glacial acetic acid and then adding titanium acetate. The films were deposited on Pt coated Si substrates by the spin-coating method and crystallized by double heat-treatment. The Ps, the Pr, and the Ec values of the film derived from the Bi-acetate were 34.8 μC/cm2, 16.2 μC/cm2, and 128 kV/cm, respectively. The Ps, the Pr, and the Ec of the films from the Bi-nitrate were 14.2 μC/cm2, 5.7 μC/cm2, and 105 kV/cm, respectively. The Bi4T3O12 films prepared from the Bi-acetate revealed better ferroelectricity and resistivity compared to those obtained from the Bi-nitrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 255
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCE

1. Ghosh, P.K., Bhalla, A.S., Cross, L.E., IEEE, 596 (1986)Google Scholar
2. Kijima, T., Satoh, S., Matsunaga, H. and Koba, M., Jpn. J. Appl. Phys. 35, 1246 (1996)Google Scholar
3. Prasada Rao, A.V., Robin, A.I., Komarneni, S., Mat. Lett., 28, 469 (1996)Google Scholar
4. Maffei, N. and Krupanidhi, S.B., J. Appl. Phys. 72(8), 3617 (1992)Google Scholar
5. Sedlar, M. and Sayer, M., Ceramics International 22, 241 (1996)Google Scholar
6. Lu, Y., Hoelzer, D. T., Schulze, W.A., Tuttle, B., and Potter, B.G., Mater Sci. and Eng. B39, 41 (1996)Google Scholar
7. Cummins, S.E. and Cross, L.E., J. Appl. Phys. 39, 2268 (1968)Google Scholar