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Crystallographic Mapping in Scanning and Transmission Electron Micrsocopy with Application to Semiconductor Materials

Published online by Cambridge University Press:  10 February 2011

D. J. Dingley ,
S. I. Wright  and
D. J. Dingley Jr.
D. J. Dingley
Affiliation:
TexSEM Laboratories, Draper Utah 84020
S. I. Wright
Affiliation:
TexSEM Laboratories, Draper Utah 84020
D. J. Dingley Jr.
Affiliation:
TexSEM Laboratories, Draper Utah 84020
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Abstract

The two sister techniques, Electron Backscatter Diffraction and Orientation Imaging Microscopy which operate in a scanning electron microscope, are well established tools for the characterization of polycrystalline materials. Experiment has shown that the limiting resolution for mapping is the order of 0.1 microns. The basic techniques have been extended to include multiphase mapping. Whereas it has been possible to distinguish between phases of different crystal systems easily, it has not been possible to distinguish between phases that differ in lattice parameter by less than 5 %.

An equivalent transmission electron microscope procedure has been developed. The technique couples standard hollow cone microscopy procedures with dark field microscopy. All possible dark field images that can be produced by tilting the electron beam are scanned to detect under what settings each crystal is brought into a diffracting condition. Subsequent analysis permits determination of both crystal phase and orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 253
Copyright
Copyright © Materials Research Society 1998

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References

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