Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-07T21:19:47.890Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallographic Structure of Mesotaxial IrSi3 in Si×

Published online by Cambridge University Press:  22 February 2011

H.-J. Hinneberg ,
T. P. Sjoreen  and
M. F. Chisholm
H.-J. Hinneberg
Affiliation:
KFA Jūlich, Inst. f. Schicht- und Ionentechnik, Postf. 1913, D-52425 Jūlich, Germany
T. P. Sjoreen
Affiliation:
Oak Ridge National Laboratory, Solid State Div., P.O.Box 2008 Oak Ridge, TN 37831
M. F. Chisholm
Affiliation:
Oak Ridge National Laboratory, Solid State Div., P.O.Box 2008 Oak Ridge, TN 37831
Get access

Abstract

A buried epitaxial IrSi3 layer has been produced in (111) oriented Si by high dose Ir+-implantation (1 MeV, 1.7×1017 Ir+/cm2, 550°C) and subsequent annealing (5 h at 1100°C). Transmission electron microscopy and ion channeling show that the hexagonal IrSi3 prefers to form with its (2110) plane oriented parallel to Si(111), while its [0001] direction is parallel to either [112], [121], or [211]. Thus, the IrSi3 film is made up of three differently oriented crystals, each occupying about 1/3 of the suicide volume.

A dose of 3.5×1016 Ir+/cm2 leads to the formation of a band of large, isolated precipitates. They have the same epitaxial relationship to Si, but the Si(111) plane is no longer the only one to which the (2110) of IrSi3 is parallel. Instead precipitates are also observed oriented parallel to (111), (111), and (111) in Si in roughly equal numbers. Consequently, there are now 12 possible orientations of IrSi3 crystals. We assume that strain relief and interface area minimization are the main factors suppressing the additional orientations in the continuous IrSi3 films formed by the coalescence of precipitates at higher doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 717
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

♦

Present address: TU Chemnitz-Zwickau, Fachbereich Physik, Postf.964 D-09009 Chemnitz, Germany

×

This Research was sponsored in part by the Division of Materials Science, U. S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy System.Inc.

References

REFERENCES

1 Wittmer, Marc, Phys. Rev. B42, 5249 (1990)Google Scholar
2 Chu, J.J., Chen, L:J:, Tu, K.N., J. Appl. Phys. 63, 1163 (1988)Google Scholar
3 Lin, T.L., Nieh, C. W., Hashimoto, Shin, Xiao, Q.F., Thin Sol. Films 184, 343 (1990)Google Scholar
4 Yu, K.M., Katz, B., Wu, I.C., Brown, I.G., Nucl. Instr. Meth. B58, 27 (1991)Google Scholar
5 Short, K.T., White, Alice E., Eaglesham, D.J., Jacobson, D.C., Poate, J. M., Proc. Mat. Res. Soc. 235, 279 (1992)Google Scholar
6 Sjoreen, T.P., Hinneberg, H.-J., Proc. Mat. Res. Soc. 279, 243 (1993)Google Scholar
7 Sjoreen, T.P., Hinneberg, H.-J., These ProceedingsGoogle Scholar
8 White, J.G., Hockings, E.F., Inorg. Chem. 10, 1934 (1971)Google Scholar
9 Finnie, L.N., Less, J.-Common Metals, 4, 24 (1962)Google Scholar
10 Engström, I., Zackrisson, F., Acta Chem. Scand., 24, 2109 (1970)Google Scholar
11 Engström, I., Zdansky, E., Acta Chem. Scand., A36, 857 (1982)Google Scholar