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A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

Published online by Cambridge University Press:  22 February 2011

Han-Sheng Lee
Han-Sheng Lee*
Affiliation:
Electronics Department General Motors Research Laboratories Warren, Michigan 48090–9055
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Abstract

N-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 603
Copyright
Copyright © Materials Research Society 1984

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References

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