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Current Induced Degradation of a-Si:H Pin and Schottky Switches

Published online by Cambridge University Press:  21 February 2011

K.J.B.M. Nieuwesteeg ,
J. Boogaard  and
G. Oversluizen
K.J.B.M. Nieuwesteeg
Affiliation:
Philips Ries. Labs., P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
J. Boogaard
Affiliation:
Philips Ries. Labs., P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
G. Oversluizen
Affiliation:
Philips Ries. Labs., P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
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Abstract

Forward-bias current stress experiments were performed on α-Si:H p-i-n and Schottky switches at several temperatures and at current densities up to 6 A/cm2. In Schottky diodes, current stressing results in a lowering of the forward-bias SCLC current together with an increase of its thermal activation energy. The reverse current is unaffected. The rate of degradation of the forward current increases with increasing temperature. From a comparison of the degradation behaviour of Schottky's with different barrier height we find that the rate of degradation is correlated to the minority-carrier injection ratio of the Schottky contact. The effects are interpreted as being due to metastable state creation in the bulk α-Si:H. The rectifying properties of the metal-to-semiconductor contact are relatively stable to current stress.

The forward-bias I-V curves of p-i-n diodes degrade much faster than those of the Schottky switches. At the same time, the reverse-bias current increases due to the stress. The lower stability to current-stress of p-i-n diodes is ascribed to the much higher hole injection in the mesa. After a short time, the reverse-bias current becomes dominated by e-h generation from the created deep states in the i-layer and then gives a direct indication of its time dependence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 479
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. a), see e.g. AIP Conference Proceedings No. 157 on Stability of Amorphous Silicon Alloys and Devices, Palo Alto, CA 1987, ed. Stafford, B.L. and Sabisky, E. (American Institute of Physics, New York, 1987.Google Scholar
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4. Note that even in n-i-n devices, thermally generated holes are likely to play an important role in the degradation process. Results of our studies into the causes and effects of current degradation in n-i-n diodes were published in: Nieuwesteeg, K.J.B.M., Boogaard, J., Powell, M.J. and Oversluizen, G., J. Appl. Phys. 71, 1290 (1992).CrossRefGoogle Scholar