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Current-voltage Characteristics of Single CdSe Colloidal Nanodots Measured by Conductive-tip Atomic Force Microscopy

Published online by Cambridge University Press:  11 February 2011

Ichiro Tanaka
Affiliation:
Department of Materials Science & Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640–8510, Japan
Eri Kawasaki
Affiliation:
Department of Materials Science & Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640–8510, Japan
O. Ohtsuki
Affiliation:
Department of Materials Science & Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640–8510, Japan
K. Uno
Affiliation:
Department of Materials Science & Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640–8510, Japan
M. Hara
Affiliation:
Frontier Research System, RIKEN, 2–1 Hirosawa, Wako, Saitama 351–0198, Japan
H. Asami
Affiliation:
Science and Technology Research Center, Mitsubishi Chemical Corp., 1000 Kamoshida-cho, Aoba-ku, Yokohama 227–8502, Japan
T. Murase
Affiliation:
Science and Technology Research Center, Mitsubishi Chemical Corp., 1000 Kamoshida-cho, Aoba-ku, Yokohama 227–8502, Japan
I. Kamiya
Affiliation:
Science and Technology Research Center, Mitsubishi Chemical Corp., 1000 Kamoshida-cho, Aoba-ku, Yokohama 227–8502, Japan
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Abstract

We have investigated current-voltage characteristics of individual CdSe colloidal nanodots by conductive-tip atomic force microscopy (AFM). The colloidal nanodots were spun-coat and scattered on a self-assembled monolayer of thiophene molecules formed on Au (111) surfaces for single dot measurements. A thin SiO2 layer was deposited on the sample surface in order to prevent the dots being moved by the tip during measurement. We imaged the topography of isolated single dots by AFM operated in contact mode, and measured current-voltage characteristics with the conductive tip positioned on single dots; large conductivity changes which suggest resonant tunneling through a quantized energy level in the dot was observed even at room temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Murray, C. B., Norris, D. J., and Bawendi, M. G., J. Am. Chem. Soc. 115, 8706 (1993);Google Scholar
Danek, M., Jensen, K. F., Murray, C. B., and Bawendi, M. G., Appl. Phys. Lett. 65, 2795 (1994).Google Scholar
Guzelian, A. A., Banin, U., Kadavanich, A. V., Peng, X., and Alivisatos, A. P., Appl. Phys. Lett. 69, 1432 (1994).Google Scholar
Maenosono, S., Dushkin, C. D., Saita, S., and Yamaguchi, Y., Jpn. J. Appl. Phys. 39, 4006 (2000).Google Scholar
4. Alperson, Boaz, Rubinstein, Israel, Hodes, Gray, Porath, Danny, and Millo, Oded, Appl. Phys. Lett. 75, 1751 (1999).Google Scholar
5. Millo, Oded, Katz, David, Cao, Yun Wei, and Banin, Uri, Phys. Rev. B 61, 16773 (2000).Google Scholar
6. Katz, David, illo, Oded, Kan, Shi-Hai, and Banin, Uri, Appl. Phys. Lett. 79, 117 (2001).Google Scholar
7. Bakkers, Erik P. A. M. and Vanmaekelbergh, Daniel, Phys. Rev. B 62, R7743 (2000).Google Scholar
8. Tanaka, Ichiro, Kamiya, I., Sakaki, H., Qureshi, N., Allen, S. J. Jr, and Petroff, P. M., Appl. Phys. Lett. 74, 844 (1999).Google Scholar
9. Tanaka, Ichiro, Kawasaki, Eri, Ohtsuki, O., Hara, M., Asami, H., and Kamiya, I. in Progress in Semiconductor Materials for Optoelectronic Applications, edited by Jones, E. D., Manasreh, O., Chowuette, K. D., Friedman, D. J., and Johnstone, D. K., (Mat. Res. Symp. Proc. 692, Warrendale, PA, 2002) pp. 467471.Google Scholar