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CW Laser-Induced Removal of Interconnections in Submicron Devices

Published online by Cambridge University Press:  25 February 2011

Geoffroy Auvert
Geoffroy Auvert*
Affiliation:
France Telecom CNET BP98-F 38243 Meylan France.
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Abstract

The interaction of a cw argon-ion laser with the materials used in the microelectronics technology is described as a pyrolytic effect. A chemical reaction is induced between the oxide layer and the hot irradiated silicon or aluminum line. By making a cross section of the irradiated area using a focused ion beam, the formation of an unstable insulating material covering the conducting material is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 711
Copyright
Copyright © Materials Research Society 1993

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References

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