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Damage Distribution Studies in Proton-Implanted GaAs
Published online by Cambridge University Press: 25 February 2011
Abstract
Samples of n+-GaAs implanted with 300 keV protons have been examined using high resolution electron microscopy, capacitance-voltage profilometry, and infrared reflectance. In contrast to previously reported results, electron microscopic examination of the as-implanted samples revealed the presence of dislocation loops and/or precipitates both near the wafer surface and at the bottom of the implanted layer. These results are corroborated by electrical and optical measurements.
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- Copyright © Materials Research Society 1984
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