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D.C Current-Voltage Characteristics and Admittance Spectroscopy of an Al-Porous Si Barrier
Published online by Cambridge University Press: 15 February 2011
Abstract
We present the temperature and frequency dependence of the current-voltage (I-V) characteristics of Al barriers deposited on porous Si grown on p-type Si substrates. These barriers exhibit a rectifying behaviour when the temperature is higher than 250 K. The I-V characteristics can be understood by a conduction in porous Si taking place via free electrons thermally excited from Pb centers associated with the existence of a SiO2-Si interface and via hopping between these Pb centers.
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- Copyright © Materials Research Society 1997
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