Article contents
The Deep 0.11eV Manganese Acceptor Level in GaAs
Published online by Cambridge University Press: 25 February 2011
Abstract
The 0.11 eV Mn acceptor has been investigated using different kinds of FΠR techniques, Zeeman spectroscopy, and photoluminescence. The results clearly fits into the Зd5+ shallow hole model for Mn° and show that the 0.11 eV level originates from the io-nization of a neutral, substitutional Mn acceptor at a Ga-site. The ground state binding energy obtained from the effective-mass like excited states is 112.4 meV.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
- 2
- Cited by