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Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases

Published online by Cambridge University Press:  26 February 2011

J. C. Chen ,
Z. C. Huang ,
Bing Yang ,
H. K. Chen  and
K. J. Lee
J. C. Chen
Affiliation:
Department of Electrical Engineering, Univ. of Maryland Baltimore County, Baltimore, MD 21228
Z. C. Huang
Affiliation:
Department of Electrical Engineering, Univ. of Maryland Baltimore County, Baltimore, MD 21228
Bing Yang
Affiliation:
Department of Electrical Engineering, Univ. of Maryland Baltimore County, Baltimore, MD 21228
H. K. Chen
Affiliation:
Department of Electrical Engineering, Univ. of Maryland Baltimore County, Baltimore, MD 21228
K. J. Lee
Affiliation:
Department of Electrical Engineering, Univ. of Maryland Baltimore County, Baltimore, MD 21228
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Abstract

A study was carried out to characterize the deep impurities in AlxGa1-x As grown by metal-organic chemical vapor deposition (MOCVD) using different carrier gases. Since AlxGai1-x As is very sensitive to any impurities, especially moisture and oxygen, in the growth process, the concentration of impurities in AlxGai1-xAs can serve as a measure of the purity of carrier gases. The undoped AlGaAs layers grown by using H2 have n-type background concentrations from 3×1015 to 10×1015/cc. The concentrations of oxygen-related traps (Ec−0.53 and 0.7 eV) are 0.2−9×1013 and 3.4−5×1014/cc for Pd- and Li-purified H2, respectively. Low-temperature photoluminescence (PL) measurements show better PL efficiency in samples grown by using Pd- purified H2. AlxGa1-xAs grown by using N2 is p-type (p∼6×1016/cc) with an oxygen-related trap and two hole traps. The concentration of oxygen-related trap is more than one order of magnitude higher than that of AlGaAs using Pd-purified H2. The memory effect due to impurities from carrier gas left in source materials is also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 153
Copyright
Copyright © Materials Research Society 1995

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