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Defect Analysis of Rapid Thermal Processing Round Robin Results

Published online by Cambridge University Press:  25 February 2011

C. B. Yarling  and
W.A. Keenan
C. B. Yarling
Affiliation:
Varian/Extrion, Inc., Blackburn Industrial Park, Gloucester, MA 01930
W.A. Keenan
Affiliation:
Prometrix Corporation, 3255 Scott Blvd., Bldg. 6, Santa Clara, CA 95054
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Abstract

The Greater Silicon Valley Implant Users' Group (GSVIUG) has conducted a round robin to determine the uniformity and repeatability available in wafers processed with modern RTP equipment. High-dose ion implantation (As, 5E15, 80keV) of 150mm wafers was used to monitor temperature distribution through sheet resistance. Sheet resistance maps were then used to compare the uniformity and repeatability of each vendor. As previously reported, the actual uniformity results varied significantly with RTP vendor and implant conditions, ranging from 0.77% (one sigma/mean) to 3.55%. In addition, some contour patterns were quite representative of specific vendors.

Subsequently, wafers from each participating vendor were evaluated by three techniques in order to determine what damage or defects might have resulted from the RTP process: laser flatness measurement, optical-imaging inspection, and thermal wave measurement. The flatness measurement system was used to measure the warpage of each sample. The reflective-optical inspection technique is a full-field, non-destructive technique that provides a real-time visual display, evidenced by light and dark field contrast over the entire wafer. The thermal wave measurement system uses two laser probes to measure a difference in modulated reflectance which results from damage or defects within the wafer.

This paper describes each of the three techniques and summarizes the measured results of wafer defects and damage due to the processing by various RTP vendors. Comparisons between the three measurement techniques are made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 451
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Greater Silicon Valley Implant Users' Group; Danny Rosenblatt, Secretary; c/o Watkins-Johnson, Co. 3333 Hillview Ave., Palo Alto, CA 94304Google Scholar
2. Seidel, T.E., et al., Mat. Res. Soc. Proc. 35, 329 (1985)Google Scholar
3. Keenan, W.A. and Yarling, C.B., in Semiconductor Fabrication: Technology and Metrology, ASTM STP 990, Gupta, D. C., editor, American Society for Testing and Materials, May 1988; presented at ASTM conference, 4 February 1988, Santa Clara, CA.Google Scholar
4. Yarling, C.B. and Keenan, W.A., Nuc. Inst. and Methods In Phys Res., Sec B: Beam Interactions with Materials and Atoms, B36/37, 828 (1989). Proceedings of the Seventh International Converence on Ion Implanation Technology, Kyoto, Japan, June 7-10, 1988; edited by Takagi, T..Google Scholar
5. GCA/Tropel, 60 O'Connor Rd., Fairport, NY 14450 (716-377-3200)Google Scholar
6 Hologenix, Inc., 22760 Hawthorne Blvd., Ste. 106, Torrance CA 90505 (213-791-0128)Google Scholar
7 Kugimiya, K., J. Electrochem. Soc., 130 (10), 2123 (1983).Google Scholar
8 Kugimiya, K., J. Electrochem. Soc., 132 (6), 1496 (1985).Google Scholar
9. Therma-Wave Inc., 47320 Mission Falls Court, Fremont, CA 94539 (415-490-3663)Google Scholar
10. Rosencwaig, A., Science, 218, (4569), 223 (1982).CrossRefGoogle Scholar
11. Rosencwaig, A., Opsal, J., and Willenborg, D. L., Appl. Phys. Let., 43, 166 (1983)Google Scholar
12. Opsal, J. and Rosencwaig, A., Appl. Phys. Let. 47, 1013 (1985).CrossRefGoogle Scholar
13. Smith, W.L., Rosencwaig, A., and Willenborg, D., Appl. Phys. Let., 47, 584 (1985)CrossRefGoogle Scholar
14. Smith, W.L., Taylor, M.W., and Schuur, J., Proc. of SPIE, 530,201 (January 1985)Google Scholar
15. Smith, W.L., Rosencwaig, A., Willenborg, D., Opsal, J., and Taylor, M., Sol. State Tech., 29, 1, 85 (January 1986)Google Scholar
16. Smith, W.L. and Rosencwaig, A., Bull. Amer. Phys. Soc., 31, 273 (1986)Google Scholar
17. Geraghty, P. and Smith, W.L., in Plasma Processing, edited by Coburn, J., Bottscho, R.A., and Hess, D.W., (Mater. Res. Soc. Proc. 68, Pittsburgh, PA 1986) pp. 387–393.Google Scholar