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Defect Engineering in SI:ER Technology

Published online by Cambridge University Press:  10 February 2011

N. A. Sobolev ,
O. V. Alexandrov ,
M. S. Bresler ,
V. V. Emtsev ,
O. B. Gusev ,
D. S. Poloskin  and
E. I. Shek
N. A. Sobolev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
O. V. Alexandrov
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
M. S. Bresler
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
V. V. Emtsev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
O. B. Gusev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
D. S. Poloskin
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
E. I. Shek
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, NSobolev@optl.pti.spb.su
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Abstract

Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects in Er-related defects formation for both implanted and in-diffused Si:Er structures is demonstrated.

The data of electroluminescence (EL) measurements evidence that the Er3+ excitation occurs via capture of free excitons on neutral Er-related donor centers with subsequent Augerrecombination of bound excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 125
Copyright
Copyright © Materials Research Society 1996

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References

1. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y. H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys. 70, p. 2,672 (1991).Google Scholar
2. Priola, F., Coffa, S., Franzo, G., Spinella, C., Carnera, A. and Bellany, B., J. Appl. Phys 74, p. 4936 (1993).Google Scholar
3. Vyzhigin, Yu. V., Sobolev, N. A., Gresserov, B. N. and Shek, E. I., Semicond. 26, p. 1 ,087 (1992).Google Scholar
4. Alexandrov, O. V., Emtsev, V. V., Poloskin, D. S., Sobolev, N. A. and Shek, E. I., Semicond. 28, p. 2,045 (1994).Google Scholar
5. Bresler, M. S., Gusev, O. B., Zakharchenya, B. P., Pak, P. E., Sobolev, N. A., Shek, E. I., Yassievich, I. N., Makoviichuk, M. I. and Parshin, E. O., Semicond. 30, p. 898 (1996).Google Scholar
6. Coffa, S., Priolo, F., Franzo, G., Bellani, V., Carnera, A. and Spinella, S., Phys. Rev. B 48, p. 11,782 (1993).Google Scholar
7. Sobolev, N. A., Alexandrov, O. V., Bresler, M. S., Gusev, O. B., Shek, E. I., Makovijchuk, M. I. and Parshin, E. O., Mater. Sci. Forum 196–201, p. 597 (1995).Google Scholar
8. Bresler, M. S., Gusev, O. B., Makoviichuk, M. I., Pak, P. E., Parshin, E. O., Shek, E. I., Sobolev, N. A., Yassievich, I. N., Zakharchenya, B. P., Proc. SPAI 2,706, p. 272 (1995).Google Scholar
9. Shin, J. H., van den Hoven, G.N. and Polman, A., Appl. Phys. Lett. 67, p. 377 (1995).Google Scholar
10. Tsimperidis, I., Gregorkiewicz, T. and Ammerlaan, C. A. J., Mater. Sci. Forum 196–201, p. 591 (1995),Google Scholar
11. Bresler, M. S., Gusev, O. B., Zakharchenya, B. P. and Yassievich, I. N., Solid State Physics 38, p. 165 (1996).Google Scholar